drain-source voltage中文是什么意思

• 漏源电压

• "drain"中文翻译    vt. 1.排去(水等液体)，排泄，放干 (away; ...
• "source"中文翻译    n. 1.源头，水源，源泉。 2.根源，本源；来源。 3 ...
• "voltage"中文翻译    n. 【电学】电压，电压量，伏特数。 the worki ...
• "drain source breakdown voltage" 中文翻译 :    漏源击穿电压; 漏源极击穿电压
• "drain source voltage" 中文翻译 :    漏源电压
• "source drain voltage" 中文翻译 :    源极漏极电压
• "source-drain voltage" 中文翻译 :    源漏电压; 源漏间电压
• "source and drain" 中文翻译 :    层连接晶体管栅极和源以及漏极
• "drain voltage" 中文翻译 :    漏电压
• "voltage, drain" 中文翻译 :    漏极电压
• "source of voltage" 中文翻译 :    电源
• "source voltage" 中文翻译 :    电源电压; 源电压
• "voltage source" 中文翻译 :    电压电源; 电压源; 定压源
• "voltage-source" 中文翻译 :    电压电
• "voltage controlled voltage source" 中文翻译 :    电压控制电压源
• "voltage source voltage measurement" 中文翻译 :    施加电压电压测试
• "voltage-controlled voltage source" 中文翻译 :    电压控制电压源
• "drain and source diffusion" 中文翻译 :    源 漏扩散
• "drain source resistance" 中文翻译 :    漏极源极电阻; 漏源电阻
• "drain-source resistance" 中文翻译 :    漏源电阻
• "source and drain junction" 中文翻译 :    源漏结
• "source drain diode" 中文翻译 :    源极 漏极二极管
• "source-and-drain junction" 中文翻译 :    场效应晶体管的源漏结; 源漏结
• "source-drain characteristics" 中文翻译 :    源漏特性
• "zero drain source overlap" 中文翻译 :    源漏无重叠

• The effects of the operation temperatures , gate voltages , drain - source voltages and magnetic field upon the characteristic of device are analyzed in detail . coulomb blockade and single electron tunneling are observed in the devices . 3
  详细地分析了工作温度、栅极电压、漏源电压和磁场对其特性的影响，观测到明显的库仑阻塞效应和单电子隧穿效应，器件的工作温度可达到77k以上。
• We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive , hysteresis , influence of sidegating effect on mesfet threshold voltage , influence of drain - source voltage on sidegating threshold voltage , influence of exchanging drain and source electrode on sidegating threshold voltage , relation between sidegating threshold voltage and the distance between side - gate and mesfet , relation between sidegating effect and floating gate , and so on
  本文还采用平面选择离子注入隔离工艺，开展了旁栅效应的光敏特性、迟滞现象、旁栅效应对mesfet阈值电压的影响、 mesfet漏源电压对旁栅阈值电压的影响、漏源交换对旁栅阈值电压的影响、旁栅阈值电压与旁栅距的关系、旁栅效应与浮栅的关系等研究。